| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Power Rating | 78 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0037 Ω |
| Polarity | N-Channel |
| Power Dissipation | 78 W |
| Threshold Voltage | 2.8 V |
| Drain to Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 4300pF @40V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ |
The BSB044N08NN3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
● Optimized technology for DC-to-DC converters
● Excellent gate charge x RDS (ON) product (FOM)
● Superior thermal resistance
● Dual sided cooling
● Low parasitic inductance
● Low profile
● Normal level
● 100% avalanche tested
● Qualified according to JEDEC for target applications
● Compatible with DirectFET® package MN footprint and outline
● Green device
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