| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-TDSON-8 |
| Power Rating | 139 W |
| Number of Positions | 8 Position |
| Polarity | N-Channel |
| Power Dissipation | 139 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 6800pF @20V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.1 mm |
| Size-Width | 5.35 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSC010N04LS is a 40V N-channel Power MOSFET optimized for synchronous rectification. This MOSFET features not only the industry"s lowest RDS (on) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (on) and 31% lower Figure of Merit (RDS (on) x Qg) compared to alternative devices has been realized by advanced thin wafer technology. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
● Highest system efficiency
● Less paralleling required
● Increased power density
● Saving space
● Very low voltage overshoot
● Superior thermal resistance
●Due to technical requirements, component may contain dangerous substances.
Infineon
10 Pages / 0.59 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
14 Pages / 1.6 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
27 Pages / 1.91 MByte
Infineon
Trans MOSFET N-CH 40V 39A Tape
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
