BSC011N03LSIATMA1 Datasheet PDF - Infineon

The BSC011N03LSI is a N-channel Power MOSFET features ultra low gate and output charge. With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions. It is tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life.

● Lowest ON-state resistance in small footprint packages

● Easy to design in

● Increased battery lifetime

● Improved EMI behaviour making external snubber networks obsolete

● Reducing power losses

● Optimized for high performance SMPS

● Integrated monolithic Schottky-like diode

● Very low ON-resistance RDS (ON) @ VGS = 4.5V

● 100% Avalanche tested

● Qualified according to JEDEC for target applications

● Halogen-free, Green device