TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PG-TDSON-8 |
Power Rating | 83 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0025 Ω |
Polarity | N-Channel |
Power Dissipation | 83 W |
Threshold Voltage | 2.8 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 100A |
Rise Time | 38 ns |
Input Capacitance (Ciss) | 2700pF @30V(Vds) |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.1 mm |
Size-Width | 5.15 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ |
The BSC028N06NS is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET features 40% lower RDS (on) than alternative devices. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
● Highest system efficiency
● Less paralleling required
● Increased power density
● Saving space
● Very low voltage overshoot
● Superior thermal resistance
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