TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | TDSON-8 |
Power Rating | 125 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0023 Ω |
Polarity | P-Channel |
Power Dissipation | 125 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 25.4A |
Rise Time | 105 ns |
Input Capacitance (Ciss) | 10500pF @15V(Vds) |
Fall Time | 33 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 125 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5.9 mm |
Size-Width | 5.15 mm |
Size-Height | 1.27 mm |
Operating Temperature | -55℃ ~ 150℃ |
The BSC030P03NS3 G is a P-channel OptiMOS™ power MOSFET consistently meet the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics. It is suitable for use with DC-to-DC converters, eMobility, notebook and on-board charger applications.
● Enhancement-mode
● Normal level, logic level or super logic level
● Avalanche rated
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