| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-TDSON-8 |
| Power Rating | 50 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0078 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 1.7 V |
| Input Capacitance | 2600 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 2600pF @30V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.49 mm |
| Size-Width | 5.15 mm |
| Size-Height | 1.27 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSC100N06LS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
● Highest system efficiency
● Less paralleling required
● Increased power density
● Saving space
● Very low voltage overshoot
● Superior thermal resistance
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