| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | PG-TDSON-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Power Dissipation | 125 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 3.3 ns |
| Input Capacitance (Ciss) | 2080pF @75V(Vds) |
| Fall Time | 2.9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.9 mm |
| Size-Width | 5.15 mm |
| Size-Height | 1.27 mm |
Description:
●The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
●Summary of Features:
● Lower R DS(on) without compromising FOM gd and FOM oss
● Lower output charge
● Ultra-low reverse recovery charge
● Increased commutation ruggedness
● Higher switching frequency possible
●Benefits:
● Reduced paralleling
● Size reduction enabled with SuperSO8 best-in-class
● Higher power density designs
● More rugged products
● System cost reduction
● Improved EMI behavior
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