TYPE | DESCRIPTION |
---|
Number of Pins | 8 Pin |
Case/Package | PG-TDSON-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.114 Ω |
Power Dissipation | 150 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 300 V |
Rise Time | 4 ns |
Input Capacitance (Ciss) | 1840pF @150V(Vds) |
Fall Time | 4 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Summary of Features:
● Improved hard commutation ruggedness
● Optimized hard switching behavior
● Industry’s lowest R ds(on), Q g and Q rr
● RoHS compliant - halogen free
●Benefits:
● Highest system reliability
● System cost reduction
● Highest efficiency and power density
● Easy-to-design products
Infineon
11 Pages / 0.9 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
Infineon
New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
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