TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PG-TDSON-8 |
Power Rating | 57 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.042 Ω |
Polarity | N-Channel |
Power Dissipation | 57 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 150 V |
Continuous Drain Current (Ids) | 21A |
Rise Time | 4 ns |
Input Capacitance (Ciss) | 890pF @75V(Vds) |
Input Power (Max) | 57 W |
Fall Time | 3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 57W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5.9 mm |
Size-Width | 5.15 mm |
Size-Height | 1.27 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSC520N15NS3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
● Excellent switching performance
● Environmentally-friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy to design
Infineon
10 Pages / 0.64 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte
Infineon
The BSC520N15NS3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.