TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.077 Ω |
Power Dissipation | 0.83 W |
Threshold Voltage | 1.5 V |
Input Capacitance | 190 pF |
Drain to Source Voltage (Vds) | 30 V |
Rise Time | 8 ns |
Input Capacitance (Ciss) | 190pF @10V(Vds) |
Input Power (Max) | 830 mW |
Fall Time | 26 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 830mW (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
The BSH108,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications.
● Very fast switching
● Logic level compatible
● Subminiature surface-mount package
● -65 to 150°C Operating junction temperature range
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