| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 830 mW |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 335 mA |
| Input Capacitance (Ciss) | 40pF @10V(Vds) |
| Input Power (Max) | 830 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 830 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The BSH111,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and logic level translator applications.
● Very fast switching
● Logic level compatible
● Subminiature surface-mount package
● -65 to 150°C Junction temperature range
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