| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 830 mW |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 850 mA |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 138pF @25V(Vds) |
| Input Power (Max) | 360 mW |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 830 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSH114,215 is a 100V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for use in relays and DC to DC converters applications.
● 150°C Junction temperature
● Low conduction losses
NXP
206 Pages / 0.21 MByte
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