| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.1 Ω |
| Power Dissipation | 417 mW |
| Input Capacitance | 70 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 4.5 ns |
| Input Capacitance (Ciss) | 70pF @48V(Vds) |
| Input Power (Max) | 417 mW |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 417 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSH201,215 is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics.
● Logic-level compatible
● Very fast switching
● Low threshold voltage
Nexperia
7 Pages / 0.11 MByte
Nexperia
206 Pages / 0.21 MByte
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