BSM300GAL120DLC Datasheet PDF - Eupec

Manufacturer:	Eupec
Category:	IGBTs
Description:	Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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BSM300GAL120DLC Specifications

TYPE	DESCRIPTION
Power Dissipation	2.50 kW
Breakdown Voltage (Collector to Emitter)	1.20 kV

Eupec

9 Pages / 0.17 MByte

Infineon

Trans IGBT Module N-CH 1.2kV 625A 7Pin 62MM

Eupec

Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

Eupec

Eupec

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