| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 17 Pin |
| Case/Package | ECONO2-2 |
| Power Dissipation | 280 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 2nF @25V |
| Input Power (Max) | 280 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 40 ℃ |
| Power Dissipation (Max) | 280000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Size-Length | 107.5 mm |
| Size-Width | 45.5 mm |
| Size-Height | 17 mm |
| Operating Temperature | 150℃ (TJ) |
● Power module
● 3-phase full-bridge
● Including fast free-wheel diodes
● Package with insulated metal base plate
Infineon
10 Pages / 0.31 MByte
Infineon
143 Pages / 8.42 MByte
Infineon
Trans IGBT Module N-CH 1.2kV 50A 17Pin ECONOPACK 2
Infineon
Trans IGBT Module N-CH 1.2kV 50A 17Pin ECONOPACK 2 T/R
Infineon
Trans IGBT Module N-CH 1.2kV 70A 17Pin EconoPACK 2A T/R
Eupec
Eupec Infineon power module
Infineon
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES,
Infineon
Trans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm
Siemens Semiconductor
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
