| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-DSO-8 |
| Power Rating | 1.56 W |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0125 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 1.4 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | ±30 V |
| Continuous Drain Current (Ids) | 8A |
| Rise Time | 3.8 ns |
| Input Capacitance (Ciss) | 970pF @15V(Vds) |
| Input Power (Max) | 1.4 W |
| Fall Time | 4.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BSO150N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
● Low FOMSW for high frequency SMPS
● 100% Avalanche tested
● Very low ON-resistance
● Excellent gate charge
● Halogen-free
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