| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 3.10 A |
| Case/Package | PG-DSO-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.07 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.6 V |
| Input Capacitance | 380 pF |
| Gate Charge | 22.5 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Input Capacitance (Ciss) | 380pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.45 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BSO615C G is a SIPMOS® dual N/P-channel enhancement-mode Small Signal Transistor for DC-to-DC converter and on-board charger applications. It is a complementary MOSFET with n-channel and a p-channel power transistor within the same package.
● Avalanche rated
● Logic level
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