TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-261-4 |
Power Rating | 1.8 W |
Number of Channels | 1 Channel |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 1 Ω |
Polarity | N-CH |
Power Dissipation | 1.8 W |
Threshold Voltage | 1.4 V |
Drain to Source Voltage (Vds) | 200 V |
Continuous Drain Current (Ids) | 0.66A |
Rise Time | 3.4 ns |
Input Capacitance (Ciss) | 430pF @25V(Vds) |
Input Power (Max) | 1.8 W |
Fall Time | 21 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.8W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 3.5 mm |
Size-Height | 1.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description:
●Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs.
●Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel.
●Summary of Features:
● Depletion mode
● dv/dt rated
● Available with V GS(th) indicator on the reel
● Halogen free; Pb-free lead plating; RoHS compliant
● Qualified according to AEC Q101
Infineon
9 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
19 Pages / 0.88 MByte
Infineon
Trans MOSFET N-CH 200V 0.66A 4Pin SOT-223
IFC
N-Channel 200V 3.5Ω SIPMOS® Small-Signal-Transistor-PG-SOT-223
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