TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | SOT-223-4 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 239 mΩ |
Power Dissipation | 1.8 W |
Threshold Voltage | 4 V |
Rise Time | 28 ns |
Input Capacitance (Ciss) | 328pF @25V(Vds) |
Fall Time | 60 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1800 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 3.5 mm |
Size-Height | 1.6 mm |
Operating Temperature | -55℃ ~ 150℃ |
Infineon
9 Pages / 0.55 MByte
Infineon
10 Pages / 0.55 MByte
Infineon
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
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