| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 1.45 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 365pF @25V(Vds) |
| Fall Time | 87 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● Enhancement mode
● Avalanche rated
● Pb-free lead plating; RoHS compliant
● Small Signal packages approved to AEC Q101
Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.21 MByte
Siemens Semiconductor
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated)
Infineon
P-Channel SIPMOS Small-Signal Transistor
Infineon
Trans MOSFET P-CH 60V 1.9A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Trans MOSFET P-CH 60V 1.9A 4Pin(3+Tab) SOT-223 T/R
Infineon
Trans MOSFET P-CH 60V 1.9A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
MOSFET P-CH 60V 1.9A SOT223
Infineon
Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
