| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 1.25 W |
| Number of Positions | 3 Position |
| Power Dissipation | 1.25 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 2000 @500mA, 10V |
| hFE Max | 1000 |
| Input Power (Max) | 1.25 W |
| DC Current Gain (hFE) | 2000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 200 MHz |
| Power Dissipation (Max) | 1.25 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | 150℃ (TJ) |
The BSP51,115 is a NPN Darlington Transistor housed in a plastic package. It is suitable for use with the industrial high gain amplification.
● High current
● Low voltage
● Integrated diode and resistor
● PNP complements are BSP60, BSP61 and BSP62
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