| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223-4 |
| Polarity | PNP |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 1A |
| hFE Min | 2000 @500mA, 10V |
| Input Power (Max) | 1.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 200 MHz |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | 150℃ (TJ) |
If you require a higher current gain value in your circuit, then the PNP BSP61H6327XTSA1 Darlington transistor, developed by Infineon Technologies, is for you. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA|2.2@1mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.55mA@500mA|1.8@1mA@1A V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
Infineon
7 Pages / 0.53 MByte
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3 Pages / 0.36 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
Darlington Transistor PNP 60V 1A SOT223
Infineon
PNP DARLINGTON 60V 1A SOT223 **
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