| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 1.8 W |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 7.5 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.8 W |
| Drain to Source Voltage (Vds) | 250 V |
| Continuous Drain Current (Ids) | 0.26A |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 104pF @25V(Vds) |
| Input Power (Max) | 1.8 W |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Summary of Features:
● Enhancement mode
● Avalanche rated
● Pb-free lead plating; RoHS compliant
● Small Signal packages approved to AEC Q101
Infineon
8 Pages / 0.43 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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37 Pages / 2.01 MByte
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Trans MOSFET P-CH 250V 0.26A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Power Field-Effect Transistor, 0.26A I(D), 250V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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