TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 170 mA |
Case/Package | SOT-23-3 |
Power Rating | 250 mW |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.2 Ω |
Polarity | N-Channel |
Power Dissipation | 360 mW |
Threshold Voltage | 1.7 V |
Input Capacitance | 73.0 pF |
Gate Charge | 2.50 nC |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 170 mA |
Rise Time | 9 ns |
Input Capacitance (Ciss) | 73pF @25V(Vds) |
Input Power (Max) | 360 mW |
Fall Time | 2.4 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 0.36 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.92 mm |
Size-Width | 1.3 mm |
Size-Height | 0.93 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS123 from Fairchild is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
● Drain to source voltage (Vds) of 100V
● Gate to source voltage of ±20V
● Low on state resistance of 1.2ohm at Vgs 10V
● Continuous drain current of 170mA
● Maximum power dissipation of 360mW
● Operating junction temperature range from -55°C to 150°C
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