| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 250 mW |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 150 mA |
| Input Capacitance (Ciss) | 40pF @25V(Vds) |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 250mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line drivers, telephone ringer and relay drivers.
● Drain to source voltage (Vds) of 100V
● Gate to source voltage of ±20V
● Continuous drain current (Id) of 150mA
● Power dissipation (Pd) of 250mW
● Operating junction temperature range from -55°C to 150°C
NXP
206 Pages / 0.21 MByte
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