TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 170 mA |
Case/Package | SOT-23-3 |
Power Rating | 0.3 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 6 Ω |
Polarity | N-Channel |
Power Dissipation | 300 mW |
Threshold Voltage | 1.4 V |
Input Capacitance | 60 pF |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 170 mA |
Rise Time | 8 ns |
Input Capacitance (Ciss) | 60pF @25V(Vds) |
Input Power (Max) | 300 mW |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1 mm |
Weight | 0.0001279130568 kg |
Operating Temperature | -55℃ ~ 150℃ |
The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Suitable for low voltage and current applications.
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