TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 2.98 Ω |
Polarity | N-CH |
Power Dissipation | 360 mW |
Threshold Voltage | 1.405 V |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 0.17A |
Input Capacitance (Ciss) | 21.5pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 3000 |
The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such as small servo motor controller, power MOSFET gate drivers, logic level transistorss, high speed line drivers, power management/power supply and switching applications.
● High density cell design for low on-resistance
● Rugged and reliable
● Very low capacitance
● Fast switching speed
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