| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 170 mA |
| Case/Package | SOT-23-3 |
| Drain to Source Resistance (on) (Rds) | 6.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 225 mW |
| Input Capacitance | 20.0 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 170 mA |
| Input Capacitance (Ciss) | 20pF @25V(Vds) |
| Input Power (Max) | 225 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 225mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)= 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON)= 6W @ VGS = 10V High density cell design for extremely low RDS(ON) Voltage controlled small signal switch. Rugged and reliable.
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