| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 170 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 0.225 W |
| Halogen Free Status | Halogen Free |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6 Ω |
| Polarity | N-Channel |
| Power Dissipation | 225 mW |
| Threshold Voltage | 800 mV |
| Input Capacitance | 20pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 170 mA |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 20pF @25V(Vds) |
| Input Power (Max) | 225 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 225mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BSS123LT1G is a N-channel Power MOSFET with drain source voltage at 100VDC and drain current at 170mA.
● AEC-Q101 Qualified
● PPAP capable
ON Semiconductor
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