| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 170 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 mW |
| Threshold Voltage | 2.2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 170 mA |
| Rise Time | 8 ns |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 20pF @25V(Vds) |
| Input Power (Max) | 360 mW |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 360mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS123TA is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is produced using DIODES proprietary high density uses advanced Trench technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and switching applications.
Diodes
4 Pages / 0.02 MByte
Diodes
199 Pages / 0.86 MByte
Diodes
8 Pages / 0.49 MByte
Diodes
1 Pages / 0.15 MByte
ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
Fairchild
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
NXP
N CHANNEL MOSFET, 150mA,100V,SOT-23
Infineon
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23
Siemens Semiconductor
Siemens# Bss123 Mosfet n-Ch 100V 170mA Sot-23
Leshan Radio
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
National Semiconductor
TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal
Freescale
MOSFET N-CH 100V 170mA SOT-23
Nexperia
Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
