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BSS138LT1G
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BSS138LT1G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:MOSFETs
Case Package:SOT-23-3
Description:SOT-23 N-CH 50V 0.2A
Documentation:BSS138LT1G Datasheet (5 Pages)Package Outline Dimension on5 Page
Package Footprint Pad Layout on5 Page
Part Numbering System on1 Page5 Page
Pictures:
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BSS138LT1G Datasheet PDF (5 Pages)
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BSS138LT1G Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Voltage Rating (DC)50.0 V
Current Rating200 mA
Case/PackageSOT-23-3
Power Rating0.225 W
Halogen Free StatusHalogen Free
Number of Channels1 Channel
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)3.5 Ω
PolarityN-Channel
Power Dissipation225 mW
Threshold Voltage1.5 V
Input Capacitance40pF @25V
Drain to Source Voltage (Vds)50 V
Breakdown Voltage (Drain to Source)50 V
Breakdown Voltage (Gate to Source)±20.0 V
Continuous Drain Current (Ids)200 mA
Input Capacitance (Ciss)50pF @25V(Vds)
Input Power (Max)225 mW
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)225 mW
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BSS138LT1G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length2.9 mm
Size-Width1.3 mm
Size-Height0.94 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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BSS138LT1G Documents

BSS138LT1G Datasheet
ON Semiconductor
5 Pages / 0.1 MByte
BSS138LT1G Other Datasheet PDF
ON Semiconductor
14 Pages / 0.05 MByte
BSS138LT1G Notice File
ON Semiconductor
7 Pages / 0.6 MByte
BSS138LT1G Other References
ON Semiconductor
1 Pages / 0.15 MByte

BSS138LT1 Documents

BSS138LT1 Datasheet PDF
ON Semiconductor
SOT-23 N-CH 50V 0.2A
BSS138LT1 Datasheet PDF
Motorola
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN
BSS138LT1 Datasheet PDF
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
BSS138LT1G Datasheet PDF
ON Semiconductor
SOT-23 N-CH 50V 0.2A
BSS138LT1G Datasheet PDF
Leshan Radio
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3
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