TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | SOT-363 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.9 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 420 mW |
Threshold Voltage | 1.2 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 0.32A |
Input Capacitance (Ciss) | 38pF @10V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 0.32 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Cut Tape (CT) |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Logic-level compatible
● Very fast switching
ON Semiconductor
Trans MOSFET N-CH 50V 0.22A 3Pin SOT-23 T/R
Fairchild
Trans MOSFET N-CH 50V 0.2A 3Pin SOT-23 T/R
Zetex
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Infineon
SIPMOS, Logic Level (Uth > 0,8..0.2V), 50V, 220mA, 360mW, 3.5Ω(220m A), 5/12ns
Vishay Semiconductor
Trans MOSFET N-CH 50V 0.2A Automotive 3Pin SOT-23
Siemens Semiconductor
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
National Semiconductor
TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.