TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Rating | 0.36 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 7.8 Ω |
Polarity | N-Channel |
Power Dissipation | 360 mW |
Threshold Voltage | 1.4 V |
Drain to Source Voltage (Vds) | 250 V |
Continuous Drain Current (Ids) | 0.1A |
Rise Time | 5.4 ns |
Input Capacitance (Ciss) | 60pF @25V(Vds) |
Fall Time | 182 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS139H6327 is a SIPMOS® N-channel depletion mode Small Signal Transistor with one single component it is possible to realize a simple current regulator. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter and off-line voltage reference.
● dv/dt rated
● Halogen-free
● AEC-Q101 Qualified
Infineon
9 Pages / 0.7 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
19 Pages / 0.88 MByte
Infineon
Trans MOSFET N-CH 250V 0.1A 3Pin SOT-23 T/R
Infineon
Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.