| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-89-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 12 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1 W |
| Threshold Voltage | 2.8 V |
| Drain to Source Voltage (Vds) | 240 V |
| Continuous Drain Current (Ids) | -200 mA |
| Input Capacitance (Ciss) | 90pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 560mW (Ta), 12.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS192,115 is a P-channel enhancement-mode vertical double-diffused FET in a medium power and flat lead surface-mount plastic package. The DMOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications.
● Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices
● Very fast switching
● No secondary breakdown
● -55 to 150°C Junction temperature range
NXP
206 Pages / 0.21 MByte
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