TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Rating | 0.36 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.346 Ω |
Polarity | N-Channel |
Power Dissipation | 360 mW |
Threshold Voltage | 1.6 V |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 0.54A |
Rise Time | 25 ns |
Input Capacitance (Ciss) | 56pF @25V(Vds) |
Fall Time | 24 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS670S2L H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard.
● Enhancement-mode
● Avalanche rated
● Logic level
● dV/dt Rated
● Halogen-free, Green device
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