| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Power Dissipation | 0.36 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 50 V |
| Rise Time | 6.3 ns |
| Input Capacitance (Ciss) | 73pF @25V(Vds) |
| Input Power (Max) | 360 mW |
| Fall Time | 4.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 360 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
The BSS84 is a P-channel enhancement-mode FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process minimizes ON-state resistance and to provide rugged and reliable performance and fast switching. It can be used with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
● Voltage-controlled P-channel small-signal switch
● High-density cell design for low RDS (ON)
● High saturation current
ON Semiconductor
6 Pages / 0.23 MByte
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