TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -50.0 V |
Current Rating | -130 mA |
Case/Package | SOT-23-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 10 Ω |
Polarity | P-Channel |
Power Dissipation | 300 mW |
Threshold Voltage | 0.8 V |
Input Capacitance | 45.0 pF |
Drain to Source Voltage (Vds) | 50 V |
Breakdown Voltage (Drain to Source) | 50 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 130 mA |
Input Capacitance (Ciss) | 45pF @25V(Vds) |
Input Power (Max) | 300 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ |
The BSS84-7-F is a P-channel enhancement-mode MOSFET with solderable matte tin plated terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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