| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 8 Ω |
| Polarity | P-Channel |
| Power Dissipation | 360 mW |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 16.2 ns |
| Input Capacitance (Ciss) | 19pF @25V(Vds) |
| Input Power (Max) | 360 mW |
| Fall Time | 20.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 360mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1.10 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS84P H6327 from Infineon is surface mount, P channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. The device features dv/dt and Avalanche ratings.
● Automotive grade AEC-Q101 qualified
● Drain to source voltage (Vds) of -60V
● Gate to source voltage of ±20V
● Continuous drain current (Id) of -170mA
● Power dissipation (pd) of 360mW
● Operating temperature range -55°C to 150°C
● Low on state resistance of 8ohm at Vgs -4.5V
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