TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Rating | 0.36 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 8 Ω |
Polarity | P-Channel |
Power Dissipation | 360 mW |
Threshold Voltage | 1.5 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 0.17A |
Rise Time | 16.2 ns |
Input Capacitance (Ciss) | 15pF @25V(Vds) |
Fall Time | 20.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS84P H6327 from Infineon is surface mount, P channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. The device features dv/dt and Avalanche ratings.
● Automotive grade AEC-Q101 qualified
● Drain to source voltage (Vds) of -60V
● Gate to source voltage of ±20V
● Continuous drain current (Id) of -170mA
● Power dissipation (pd) of 360mW
● Operating temperature range -55°C to 150°C
● Low on state resistance of 8ohm at Vgs -4.5V
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