TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-89-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.6 Ω |
Polarity | N-Channel |
Power Dissipation | 1 W |
Threshold Voltage | 2.8 V |
Drain to Source Voltage (Vds) | 200 V |
Continuous Drain Current (Ids) | 400 mA |
Input Capacitance (Ciss) | 120pF @25V(Vds) |
Input Power (Max) | 1 W |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 580mW (Ta), 12.5W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.6 mm |
Size-Width | 2.6 mm |
Size-Height | 1.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS87,115 is a N-channel enhancement-mode vertical double-diffused FET in a medium power and flat lead surface-mount plastic package. The DMOSFET is suitable for relay driver, high-speed line driver, load-side load-switch and switching circuit applications.
● Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices
● Very fast switching
● No secondary breakdown
● -55 to 150°C Junction temperature range
NXP
206 Pages / 0.21 MByte
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