| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 350 V |
| Current Rating | 500 mA |
| Case/Package | SOT-89-3 |
| Polarity | NPN |
| Power Dissipation | 2000 mW |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 40 @20mA, 10V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 150℃ |
Use this versatile NPN BST39TA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 7 V.
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