| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | TSDSON |
| Power Rating | 37 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0033 Ω |
| Polarity | N-Channel |
| Power Dissipation | 37 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 4.4 ns |
| Input Capacitance (Ciss) | 1100pF @15V(Vds) |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.4 mm |
| Size-Width | 3.4 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BSZ0904NSI is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
● Easy to design in
● Increased battery lifetime
● Improved EMI behaviour making external snubber networks obsolete
● Saving space
● Reducing power losses
● Integrated monolithic Schottky-like diode
● Very low ON-resistance RDS (ON) @ VGS = 4.5V
● 100% Avalanche tested
● Superior thermal resistance
● Qualified according to JEDEC for target applications
● Halogen-free, Green device
Infineon
9 Pages / 0.65 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
