TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PG-TSDSON |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.014 Ω |
Polarity | N-Channel |
Power Dissipation | 63 W |
Threshold Voltage | 2.8 V |
Drain to Source Voltage (Vds) | 100 V |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 1300pF @50V(Vds) |
Input Power (Max) | 63 W |
Fall Time | 5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 63 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.4 mm |
Size-Width | 3.4 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● Excellent switching performance
● World’s lowest R DS(on)
● Very low Q g and Q gd
● Excellent gate charge x R DS(on) product (FOM)
● RoHS compliant-halogen free
● MSL1 rated 2
●Benefits:
● Environmentally friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy-to-design products
Infineon
9 Pages / 0.44 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
Infineon
Trans MOSFET N-CH 100V 8A 8Pin TSDSON T/R
Infineon
Power Field-Effect Transistor, 8A I(D), 100V, 0.016Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.