TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Supply Voltage (DC) | 1.30V (min) |
Voltage Rating (DC) | 60.0 V |
Current Rating | 3.50 A |
Case/Package | TO-220-3 |
Number of Outputs | 1 Output |
Input Voltage (DC) | 60.0 V |
Output Current | 3.5 A |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 100 mΩ |
Polarity | N-Channel |
Power Dissipation | 50000 mW |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 3.50 A |
Output Current (Max) | 3.5 A |
Output Current (Min) | 3.5 A |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 50000 mW |
Supply Voltage | 2.2V ~ 10V |
Supply Voltage (Max) | 10 V |
Supply Voltage (Min) | 1.3 V |
Input Voltage | 60 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 15.65 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
Size-Thickness | 4.40 mm |
The BTS117 is an N channel vertical Power FET in Smart SIPMOS® technology. Providing embedded protection functions.
● Logic level input
● Input protection (ESD)
● Thermal protection with latch
● Overload protection
● Short-circuit protection
● Overvoltage protection
● Current limitation
● Analog driving possible
● Green product
● AEC qualified
Infineon
11 Pages / 0.27 MByte
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138 Pages / 12.05 MByte
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