| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 10 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 7.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 60 W |
| Gain Bandwidth Product | 6 MHz |
| Breakdown Voltage (Collector to Emitter) | 200 V |
| Continuous Collector Current | 7A |
| hFE Min | 10 |
| Input Power (Max) | 60 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS
●These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s.
●Features
●• High Voltage: VCEV = 330 or 400 V
●• Fast Switching Speed: tf = 750 ns (max)
●• Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
●• Pb−Free Packages are Available
ON Semiconductor
3 Pages / 0.06 MByte
ON Semiconductor
31 Pages / 0.08 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
1 Pages / 0.14 MByte
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