| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 700 V |
| Current Rating | 8.00 A |
| Case/Package | ISOWATT-218-3 |
| Power Rating | 50 W |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 700 V |
| Continuous Collector Current | 8A |
| hFE Min | 60 @5A, 5V |
| Input Power (Max) | 52 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
●■ STMicroelectronics PREFERRED SALESTYPE
●■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE
●■ HIGH VOLTAGE CAPABILITY ( > 1400 V )
●■ HIGH DC CURRENT GAIN ( TYP. 150 )
●■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
●■ LOW BASE-DRIVE REQUIREMENTS
●■ DEDICATED APPLICATION NOTE AN1184
●APPLICATIONS
●■ COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.
ST Microelectronics
7 Pages / 0.22 MByte
ST Microelectronics
7 Pages / 0.07 MByte
ST Microelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
Galaxy Semi-Conductor
Bridge Rectifier Diode, 8A, 800V V(RRM)
Diodes
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Diodes
Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU, 4 PIN
Sensitron Semiconductor
Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, PLASTIC, KBU, 4 PIN
Good-Ark Electronics
Bridge Rectifier Diode, 8A, 800V V(RRM)
Galaxy Semi-Conductor
Bridge Rectifier Diode, 8A, 800V V(RRM)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
