| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 350 V |
| Current Rating | 10.0 A |
| Case/Package | TO-263-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 150 W |
| Input Capacitance | 550 pF |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 10A |
| hFE Min | 500 @5A, 4.6V |
| hFE Max | 3400 |
| Input Power (Max) | 150 W |
| DC Current Gain (hFE) | 500 |
| Fall Time | 625 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -65℃ ~ 175℃ (TJ) |
The BUB323ZT4G is a NPN bipolar silicon power Darlington Transistor with a built-in active Zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor control.
● Planar, monolithic
● Autoprotected
● Integrated high-voltage active clamp
● Tight clamping voltage window
● Clamping energy capability 100% tested in a live ignition circuit
● High DC current gain/low saturation voltages specified over full temperature range
● Design guarantees operation in SOA at all times
ON Semiconductor
8 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.14 MByte
ON Semiconductor
3 Pages / 0.03 MByte
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