| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 700 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Polarity | NPN |
| Power Dissipation | 100 W |
| Gain Bandwidth Product | 23 MHz |
| Breakdown Voltage (Collector to Emitter) | 700 V |
| Continuous Collector Current | 10A |
| hFE Min | 10 @5A, 5V |
| Input Power (Max) | 100 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 60 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -60℃ ~ 150℃ (TJ) |
SWITCHMODE NPN Silicon Planar Power Transistor
●The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers.
●This power transistor is specifically designed to sustain the large inrush current during either the start–up conditions or under a short circuit across the load.
●This High voltage/High speed product exhibits the following main features:
●•Improved Efficiency Due to the Low Base Drive Requirements:
● High and Flat DC Current Gain hFE
● Fast Switching
●•Robustness Thanks to the Technology Developed to Manufacture this Device
●•ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions
ON Semiconductor
10 Pages / 0.28 MByte
ON Semiconductor
31 Pages / 0.08 MByte
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