| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 85 W |
| Breakdown Voltage (Collector to Emitter) | 450 V |
| Continuous Collector Current | 8A |
| hFE Min | 5 |
| Input Power (Max) | 85 W |
| DC Current Gain (hFE) | 38 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 85000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The BUL58D is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. It is designed for use in lighting applications and switch-mode power supplies.
● Low spread of dynamic parameters
● Minimum lot-to-lot spread for reliable operation
● Low base-drive requirements
● Very high switching speed
● High ruggedness
● Integrated anti-parallel collector-emitter diode
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Semelab
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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