| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | SOT-82-3 |
| Polarity | NPN |
| Power Dissipation | 55 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 4A |
| hFE Min | 14 @2A, 5V |
| Input Power (Max) | 55 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 7.8 mm |
| Size-Width | 2.7 mm |
| Size-Height | 10.8 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
●Features
●■ High voltage capability
●■ Minimum lot-to-lot spread for reliable operation
●■ Very high switching speed
●Applications
●■ Electronic ballast for fluorescent lighting
ST Microelectronics
11 Pages / 0.21 MByte
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